▎ 摘　　要

NOVELTY - A carbon-type gas is introduced to surface vicinity of a base material (1) which is maintained at 600 degrees C or less under reduced environment. The surface (1a) of base material is heat processed at 100 degrees C or more for 5 mu seconds or less, to obtain graphene on base material. USE - Formation of graphene used for semiconductor device, solar cell and flat panel display device. ADVANTAGE - The method enables formation of graphene having uniform thickness on resin base material, at low temperature. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the apparatus for forming graphene. (Drawing includes non-English language text) Base material (1) Surface (1a) Container (11) Ground electrode (12) High-voltage electrode (13)