▎ 摘　　要

NOVELTY - The device has a semiconductor substrate (2) whose upper surface is arranged with an oxide isolating layer (3). An upper surface of the oxide isolating layer is mounted with an annular top electrode (5), where boundary part of the top electrode is less a boundary part of the oxide isolating layer. The oxide isolating layer is provided with a circular oxide layer window (4) that is connected with the annular top electrode. The semiconductor substrate is arranged in a window area. An upper surface of the oxide isolating layer is surrounded by a graphene thin film through the annular top electrode. A lower surface of the semiconductor substrate is provided with a bottom electrode (1). USE - Schottky-MOS hybrid structure based photo-negative resistance device. ADVANTAGE - The device has low cost, large negative resistance interval, rapid response speed and easy integration effect. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a schottky-MOS hybrid structure based photo-negative resistance device. Bottom electrode (1) Semiconductor substrate (2) Oxide isolating layer (3) Circular oxide layer window (4) Annular top electrode (5)