▎ 摘　　要

NOVELTY - A semiconductor device (200) comprises: 1) a substrate (110); 2) a gate electrode (230) on the substrate, of a shape with height greater than width; 3) a gate dielectric (220) on the gate electrode; 4) a channel layer (240) on the gate dielectric, comprising a two-dimensional semiconductor material; and 5) a source electrode (150) and a drain electrode (160) electrically connected to the channel layer. The height of the gate electrode is defined at a location of the gate electrode, not vertically overlapping the source electrode and the drain electrode, where, at the location of the gate electrode not vertically overlapping the source electrode and the drain electrode, the height of the gate electrode is defined from a lowermost surface of the gate electrode to an uppermost surface of the gate electrode. USE - As semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows cross-sectional view of semiconductor device. 110Substrate 150Source electrode 160Drain electrode 200Semiconductor device 220Gate dielectric 230Gate electrode 240Channel layer