▎ 摘　　要

NOVELTY - A graphene on silicon carbide substrate is prepared by washing silicon carbide substrate using RCA cleaning process, placing in reaction chamber of graphene growth device, heating, hydrogen etching, removing residual silicon carbide surface etching hydrogen compounds, heating, introducing argon gas and chlorine in vent valve, mixing, depositing carbon generated samples with nickel nanofilm layer in electron beam physical vapor deposition, heating, annealing and immersing in hydrochloric acid and copper sulfate solution. USE - Method for preparing graphene on silicon carbide substrate (claimed) used for manufacturing microelectronic devices and biological sensors. ADVANTAGE - The substrate has smooth surface, good continuity and low porosity. DETAILED DESCRIPTION - A graphene on silicon carbide substrate is prepared by washing silicon carbide substrate using RCA cleaning process, placing in reaction chamber of graphene growth device at 13.3 Pa, heating to 1600 degrees C, hydrogen etching, removing residual silicon carbide surface etching hydrogen compounds, heating at 700-1100 degrees C, introducing argon gas and chlorine in vent valve, mixing for 3-8 minutes, depositing carbon generated samples with 300-500 thick nickel nanofilm layer in electron beam physical vapor deposition, heating at 950-1150 degrees C, annealing for 10-30 minutes and immersing in hydrochloric acid and copper sulfate solution.