▎ 摘　　要

NOVELTY - The device has a voltage generator (VGEN) generating test voltage (Vt). A graphene transistor (GTr) receives gate-source voltage (Vgs) based on the test voltage. A detector (DTEC) detects whether the gate-source voltage is Dirac voltage of the graphene transistor, and outputs a feedback signal (Sfb) applied to the voltage generator indicating whether the gate-source voltage is the Dirac voltage. The detector detects whether the graphene transistor is off based on drain-source voltage and drain-source current (Ids) of the graphene transistor. USE - Semiconductor device. ADVANTAGE - The detector detects whether the gate-source voltage is the Dirac voltage of the graphene transistor, and outputs the feedback signal applied to the voltage generator indicating whether the gate-source voltage is the Dirac voltage, thus preventing malfunction of the graphene transistor. The device utilizes the detected Dirac voltage to operate the graphene transistor, thus reducing generation of leakage current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for operating a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a semiconductor device. Detector (DTEC) Graphene transistor (GTr) Drain-source current (Ids) Feedback signal (Sfb) Voltage generator (VGEN) Gate-source voltage (Vgs) Test voltage (Vt)