• 专利标题:   Method for preparing mass-produced high-performance n-type layered multi-wall carbon nanotube/graphene oxide thermoelectric material, involves immersing multiwalled carbon nanotubes/ graphene oxide (MWCNT/GO) film in n-type dopant solution.
  • 专利号:   CN111354848-A
  • 发明人:   WANG H, WANG Y, HU Q
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   H01L035/12, H01L035/14, H01L035/34
  • 专利详细信息:   CN111354848-A 30 Jun 2020 H01L-035/12 202057 Pages: 13 Chinese
  • 申请详细信息:   CN111354848-A CN10224833 26 Mar 2020
  • 优先权号:   CN10224833

▎ 摘  要

NOVELTY - The method involves manufacturing a multi-walled carbon nanotube/graphene oxide film with a layered structure by chemical vapor deposition method. The n-type dopant is added to the organic solvent and ultrasound to disperse is used to obtain a homogeneously mixed n-type dopant solution. The MWCNT/GO film is immersed in the n-type dopant solution for 1.5h3h. The MWCNT/GO film is washed and dried to obtain an n-type layered multi-walled carbon nanotube/graphene oxide thermoelectric material, after soaking is taken out. The carbon nanotubes are obtained by chemical vapor deposition and collected to form a multi-walled carbon nanotube film. USE - Method for preparing mass-produced high-performance n-type layered multi-wall carbon nanotube/graphene oxide thermoelectric material. ADVANTAGE - The synthesis method realizes large-scale preparation, and has huge application potential for wearable thermoelectric generators and thermoelectric sensors. The method is simple and realizes mass production. The doped n-type MWCNT/GO film is featured with a high PF value and excellent stability in the air. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical diagram illustrating the change of conductivity with temperature after the N-DMBI doped MWCNT/GO thin film prepared. (Drawing includes non-English language text)