• 专利标题:   Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.
  • 专利号:   CN114334611-A
  • 发明人:   LIANG Z, WANG Q, WANG X
  • 专利权人:   UNIV PEKING DONGGUAN PHOTOELECTRIC INST
  • 国际专利分类:   C23C014/02, C23C014/06, C23C014/18, C23C014/58, H01L021/02
  • 专利详细信息:   CN114334611-A 12 Apr 2022 H01L-021/02 202244 Chinese
  • 申请详细信息:   CN114334611-A CN11630538 28 Dec 2021
  • 优先权号:   CN11630538

▎ 摘  要

NOVELTY - Growing of nitride on diamond involves preparing one group of diamond single crystal substrates and three groups of diamond polycrystalline polished substrates, preparing material of gallium nitride/graphene/diamond on diamond single crystal substrate, and preparing material of gallium nitrige/molybdenum sulfide/diamond on other three sets of diamond polycrystalline polished substrates. USE - Growing of nitride on diamond used for consumer electronics, Fifth generation (5G) communication device, cloud service, photovoltaic inverter, and new energy automobile. ADVANTAGE - The method solves the lattice mismatch and stress mismatch problem of nitride directly grown on the diamond, by the application, it can realize directly growing high quality nitride epitaxial material on diamond.