▎ 摘　　要

NOVELTY - Preparation of graphene crystal domain involves providing nickel plating solution formed using 5-30 g/L nickel-containing compound and 10-50 g/L boric acid into electrolytic groove, then placing annealed nickel sheet and copper foil in plating solution, connecting the nickel sheet and copper foil with anode and cathode, carrying out electrolysis, introducing hydrogen gas, raising the temperature to 900-1050 degrees C, reacting, introducing carbon source, growing graphene crystal domain, adjusting flow rate of hydrogen, then introducing argon gas, and naturally cooling. USE - Preparation of graphene crystal domain (claimed). ADVANTAGE - The method enables efficient preparation of graphene crystal domain with different sizes. DETAILED DESCRIPTION - Preparation of graphene crystal domain involves providing a nickel sheet and a polished copper foil and annealing at 950-1077 degrees C for 1-3 hours under protective gas, preparing a nickel plating solution using 5-30 g/L nickel-containing compound and 10-50 g/L boric acid, providing the nickel plating solution into electrolytic groove, then placing the nickel sheet and copper foil in plating solution, connecting the nickel sheet and copper foil with anode and cathode, carrying out electrolysis with current density of 0.001-0.5 A/cm2 for 0.5-30 minutes to form copper-nickel double-sided substrate, introducing hydrogen gas at a flow rate of 50-300 sccm, raising the temperature to 900-1050 degrees C, reacting at 60 degrees C for 5 minutes, introducing carbon source at a flow rate of 1-30 sccm for 5-60 minutes, growing graphene crystal domain, adjusting flow rate of hydrogen to 10-50 sccm, then introducing argon gas at a flow rate of 100-500 sccm, and naturally cooling to room temperature.