▎ 摘　　要

NOVELTY - Organic field effect transistor comprises substrate, first medium layer, gate electrode, second medium layer, organic semiconductor layer, third medium layer, source electrode, leakage electrode and top sealing layer. USE - Organic field effect transistor for making flexible display circuits, smart wearable devices and bio-sensors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing organic field effect transistor which involves: (A) coating substrate and sealing layers with polyimide solution; (B) drying at 70 degrees C for 2 hours; (C) coating first, second and third medium layers with graphene oxide by plasma treatment; (D) drying in vacuum oven at 100 degrees C for 10 minutes; (E) coating source electrode, leakage electrode and gate electrode with graphite; (F) dipping electrode surface in a chlorobenzene solution containing fullerene derivative having concentration of 10 mg/mL; (G) spin coating at the rate of 400 revolutions/minute for 60 seconds; (H) drying at 115 degrees C; and (I) annealing for 2 hours to obtain organic field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of organic field effect transistor.