▎ 摘　　要

NOVELTY - The photodiode (100) has a first electrode (110), a semiconductor substrate (120), an insulating layer (130), and a second electrode (140,150) formed spaced apart from each other on the insulating layer. A semiconductor oxide film (160) is grown on a window of the semiconductor substrate exposed by etching of the insulating layer except for the region where the second electrode is formed. A graphene (170) is formed on the second electrode and the semiconductor oxide film. A Fermi level of the graphene is controlled so that a difference between a work function of semiconductor substrate and graphene is controlled, and a majority carrier moves from the graphene to the semiconductor substrate. The semiconductor substrate is composed of a p-type semiconductor, Schottky barrier height of semiconductor substrate and graphene is 0.51 eV or less. The semiconductor oxide film de-pins the Fermi level from an interface state having a reverse bias voltage between the substrate and the graphene. USE - Graphene-based photodiode used in next-generation display field such as flexible display, touch panel, energy industries such as solar cell, smart window, and radio frequency identification (RFID). ADVANTAGE - The photodiode improves the responsiveness and detection of the photodiode by controlling the work function difference between the semiconductor substrate and the graphene by controlling the Fermi level of the graphene. The photodiode is provided with improved quantum efficiency by moving a majority carrier from the graphene to the semiconductor substrate due to the semiconductor oxide film growing at the interface between the semiconductor substrate and the graphene. The photodiode is amplified by multiple carriers by controlling a Schottkybarrier with a heterojunction structure composed of a graphene-semiconductor oxide-semiconductor substrate. The heterojunction structure composed of a graphene-semiconductor oxide film-semiconductor substrate suppresses leakage current generated by a lower Schottky barrier through a semiconductor oxide film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of graphene-based photodiode. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a method of manufacturing a graphene-based photodiode. Graphene-based photodiode (100) First electrode (110) Semiconductor substrate (120) Insulating layer (130) Second electrode (140,150) Semiconductor oxide film (160) Graphene (170)