▎ 摘　　要

NOVELTY - The detector has a first supporting layer arranged above a metal reflection layer (2). An upper surface of the first supporting layer is formed with a heat sensitive film layer (8). An upper end of the heat sensitive film layer is formed with an electrode layer (12). The heat sensitive film layer is electrically connected with the metal reflection layer through the electrode layer. A second supporting layer (17) is formed on a surface of a passivation layer (14) and arranged with a metal layer (18), where the second supporting layer is made of silicon oxide material or silicon nitride material and the metal layer is made of titanium nitride, titanium or nickel-chromium metal material. The metal layer is formed with a seed layer (19), where the seed layer is made of copper material. A graphene thin film layer (20) is formed on a surface of the seed layer. USE - CVD direct growing graphene detector. ADVANTAGE - The detector utilizes a metamaterial layer to improve optical absorptivity and response rate of the detector to optimize performance of the detector by simple preparation process, thus avoiding damage to a graphene film during transferring process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a chemical vapor deposition (CVD) direct growing graphene detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a CVD direct growing graphene detector. Metal reflection layer (2) Heat sensitive film layer (8) Electrode layer (12) Passivation layer (14) Supporting layer (17) Metal layer (18) Seed layer (19) Graphene thin film layer (20)