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  • 专利标题:   Composite material for manufacturing capacitor device such as memory device, capacitor, transistor or diode, comprises polymeric material and hydrazine-reduced graphene oxide.
  • 专利号:   US2014098458-A1, WO2014058860-A1, US8878341-B2, TW201430028-A, EP2906622-A1, CN104718246-A, CN104718246-B, TW588188-B1, GC7069-A
  • 发明人:   ALMADHOUN M N, ALSHAREEF H N, BHANSALI U S, XAVIER P, ODEH I N, ALMADHOUN M, MADHOUN M, SHARIF H A, BHANSALI Y S, EXAER P
  • 专利权人:   SAUDI BASIC IND CORP, SAUDI BASIC IND CORP, SAUDI BASIC IND CORP, SAUDI BASIC IND CORP, SAUDI BASIC IND CORP, SAUDI BASIC IND CORP
  • 国际专利分类:   H01G004/14, C08K003/04, C08K009/02, C08L027/12, C07D301/36, H01L021/02, H01L049/02, C08L027/16
  • 专利详细信息:   US2014098458-A1 10 Apr 2014 H01G-004/14 201428 Pages: 21 English
  • 申请详细信息:   US2014098458-A1 US048333 08 Oct 2013
  • 优先权号:   US711279P, US048333

▎ 摘　　要

NOVELTY - A composite material comprises a polymeric material and a hydrazine-reduced graphene oxide. USE - Composite material for manufacturing capacitor device such as a memory device, a capacitor, a transistor or a diode (all claimed), various high dielectric permittivity components and high charge storage capacitors. ADVANTAGE - The composite material has high dielectric permittivity, low dielectric losses, low percolation threshold, better electrical or chemical properties, improved conductivity, better chemical interface properties, improved charge flow, or better processability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for preparing a composite material (2) a capacitor device (3) a method for manufacturing capacitor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a capacitor device. Substrate (101) Electrode (106) Dielectric layer (112) Second electrode (116)