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  • 专利标题:   Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.
  • 专利号:   WO2011058651-A1, US2012199815-A1, CN102598277-A, EP2500947-A1, JP2011540372-X, US8932904-B2, JP5708493-B2, US2015137076-A1, CN102598277-B, US9385209-B2, US2016284813-A1, EP2500947-A4, US9865699-B2, CN104934300-B, CN104934300-A, EP3379579-A1, EP2500947-B1
  • 发明人:   KONDO D, SATO S
  • 专利权人:   FUJITSU LTD, FUJITSU LTD, FUJITSU LTD, FUJITSU LTD, FUJITSU LTD, FUJITSU LTD, FUJITSU LTD
  • 国际专利分类:   H01L021/28, H01L021/336, H01L029/786, B82Y040/00, B82Y099/00, H01L021/20, H01L029/78, H01L021/3205, H01L021/768, H01L023/522, H01L023/532, H01L029/41, H01L029/417, H01L051/05, H01L051/30, H01L021/00, H01L021/02, H01L021/311, H01L021/84, H01L029/16, H01L029/66, H01L029/778, H01L021/04
  • 专利详细信息:   WO2011058651-A1 19 May 2011 H01L-029/786 201135 Pages: 49 Japanese
  • 申请详细信息:   WO2011058651-A1 WOJP069383 13 Nov 2009
  • 优先权号:   CN10249293, CN80162433, EP170424, EP851281, JP540372, WOJP069383, US453125, US563405, US166863, EP170424

▎ 摘　　要

NOVELTY - The method involves forming catalyst film (2) on the insulator. The graphene layer (3) is made to grow with catalyst film as starting point. The conductive film touching the graphene layer on the insulator is formed. USE - Manufacturing method of semiconductor device (claimed) for PC, server, mobile telephone, vehicle-mounted integrated circuit, motor drive transistor of electric vehicle. ADVANTAGE - Since the conductive film touching the graphene layer on the insulator is formed, the semiconductor device can be manufactured easily. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device. DESCRIPTION OF DRAWING(S) - The drawings show sectional views of the semiconductor device. Substrate (1) Catalyst film (2) Graphene layer (3) Electrode (4)