▎ 摘　　要

NOVELTY - Display device comprises a gate arranged on a substrate. A gate insulating layer is arranged on the substrate and covers the gate. A semiconductor layer is arranged on the gate insulating layer. A source electrode and a drain electrode are arranged on the gate insulating layer and respectively arranged at two ends of the semiconductor layer. A positive projection of the source electrode and the drain electrode on the substrate and a positive projection of a grid electrode on the substrate are not overlapped with each other. The semiconductor layer comprises an active layer, and the material of the active layer comprises amorphous indium gallium zinc oxide. The semiconductor layer comprises a photosensitive layer, and the material of the photosensitive layer comprises graphene, molybdenum disulfide, molybdenum disulfide, molybdenum selenide, selenium sulfide, tungsten sulfide and/or boron nitride. USE - Used as display device. ADVANTAGE - The device: makes positive projection of the source electrode and the drain electrode is not overlapped with the orthographic projection of the grid electrode; avoids the light beam being irradiated to the semiconductor layer by the grid electrode; expands the photosensitive area of the semiconductor layer; and improves sensitivity and response speed of the display device to the light, and product quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the display device.