• 专利标题:   Graphene-black phosphorus hybrid structure, has graphene layer arranged on black phosphorus layer, where magnetoresistance ratio of structure is determined by difference in mobility and carrier density between graphene and phosphorus layers.
  • 专利号:   WO2018067070-A1
  • 发明人:   LOH K P, LIU Y, LU J
  • 专利权人:   UNIV SINGAPORE NAT
  • 国际专利分类:   B82Y025/00, G01R033/09, H01L043/06
  • 专利详细信息:   WO2018067070-A1 12 Apr 2018 B82Y-025/00 201827 Pages: 25 English
  • 申请详细信息:   WO2018067070-A1 WOSG050499 04 Oct 2017
  • 优先权号:   SG10008310

▎ 摘  要

NOVELTY - The structure has a graphene (G) layer arranged on a black phosphorus (BP) layer, where a magnetoresistance ratio of the graphene-black phosphorus hybrid structure is determined by a difference in a charge mobility and carrier density between the graphene layer and the black phosphorus layer, and charge mobility and/or the carrier density of the graphene layer is tunable by a gate voltage applied to the graphene-black phosphorus hybrid structure, and the graphene layer is monolayer graphene, and thickness of the black phosphorus layer is measured about 5-10 nanometer. USE - Graphene-black phosphorus hybrid structure for use in a magnetoresistance sensor (claimed). ADVANTAGE - The structure utilizes a Hall sensor that provides reasonable resolution in moderate and high magnetic fields with low cost and high temperature coefficient of resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a magnetoresistance sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a layer of graphene and black phosphorus comprised in a graphene-black phosphorus hybrid structure. Black phosphorus layer (BP) Graphene (G)