▎ 摘　　要

NOVELTY - A metal oxide semiconductor memory comprises silicon substrate, tunnel oxide layer, charge storage layer, gate oxide layer and gate, arranged from bottom to top. The tunnel oxide layer is two-layer structure of ultra-thin asymmetric alumina/hafnia. The charge storage layer is four-layer graphene nanoflake. USE - Metal oxide semiconductor memory. ADVANTAGE - The metal oxide semiconductor memory can enhance the memory retention capability while maintaining the charge retention rate, and has great potential in non-volatile memory devices, and is prepared by simple, easy, and economical method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the metal oxide semiconductor memory.