• 专利标题:   Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.
  • 专利号:   US2016265104-A1, TW201632662-A, TW551736-B1
  • 发明人:   HSIEH Y, HOFMANN M, CHIU Y
  • 专利权人:   UNIV NAT CHUNG CHENG, UNIV NAT CHUNG CHENG
  • 国际专利分类:   C01B031/04, C23C016/02, C23C016/26, C23C016/56, C30B025/22, C30B029/02
  • 专利详细信息:   US2016265104-A1 15 Sep 2016 C23C-016/26 201663 Pages: 13 English
  • 申请详细信息:   US2016265104-A1 US720661 22 May 2015
  • 优先权号:   TW107364

▎ 摘  要

NOVELTY - The method involves providing (S10) sub-substrates. The sub-substrates are stacked (S60) to form a stacked substrate. The stacked substrate is placed (S30) into a crystal-growing furnace. A reaction gas is pumped (S40) into the crystal-growing furnace. The crystal-growing furnace is heated (S50) to enable the reaction gas to react on the stacked substrate, and two-dimensional crystal is formed on surface of sub-substrates in stacked substrate. USE - Method for growing two-dimensional crystals such as graphene. ADVANTAGE - The contact area is increased during the two-dimensional crystal growth by stacking the sub-substrates as the stacked substrate or rolling the sub-substrates as rolled substrate, so that mass production of single substrate grown two-dimensional crystals can be realized, by existing high temperature growing devices during the same time. Since the separation layer is provided between the sub-substrates, the substrates are prevented from sticking to each other due to melting or evaporating at high temperature. DETAILED DESCRIPTION - The material of sub-substrates is metal. The surface of sub-substrates is provided with an upper surface, a lower surface or a side surface. The sub-substrates are flat and flexible substrates. The stacked substrate is formed as a rolled substrate in shape of a column by rolling-stacking the sub-substrates. The column is a cylinder or a square column. Flexible or inflexible separation layer made of sapphire, quartz, or mica is provided between the sub-substrates. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for growing two-dimensional crystals. Step for providing sub-substrates (S10) Step for placing stacked substrate into crystal-growing furnace (S30) Step for pumping reaction gas into crystal-growing furnace (S40) Step for heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate (S50) Step for stacking sub-substrates to form stacked substrate (S60)