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  • 专利标题:   Preparation of single-layered graphene, involves placing test tube containing copper-based catalyst in tube furnace, purging tube furnace with inert gas, heating, introducing reducing gas, heating and rapidly-cooling.
  • 专利号:   CN107640763-A
  • 发明人:   SUN H, GAO Y, FU C, WANG Q, XU J, MA J, SHEN Y
  • 专利权人:   UNIV XINYANG NORMAL
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN107640763-A 30 Jan 2018 C01B-032/186 201812 Pages: 10 Chinese
  • 申请详细信息:   CN107640763-A CN11147438 17 Nov 2017
  • 优先权号:   CN11147438

▎ 摘　　要

NOVELTY - Preparation of single-layered graphene involves placing test tube containing copper-based catalyst in a tube furnace, purging tube furnace with an inert gas, heating at 600-800 degrees C for 30-120 minutes, introducing reducing gas, heating at 1000-1050 degrees C for 60-120 minutes and rapidly-cooling. USE - Preparation of single-layered graphene for high-end electronic devices and integrated circuits. ADVANTAGE - The method enables simple, safe and economical preparation of single-layered graphene with improved reliability and controllability.