• 专利标题:   Graphene mixing silicon-based Fano resonance modulator, has micro-ring resonator structure formed on silicon-on-insulator base layer, and single layer graphene covered with resonator, where resonator has straight waveguide.
  • 专利号:   CN115857099-A
  • 发明人:   XIA J, ZHANG X, DONG M, ZHU L, NI J, LU L
  • 专利权人:   UNIV BEIJING INFORMATION SCI TECHNOLOG, GUANGZHOU NANSHA BEIJIA MOULD PROCESSING
  • 国际专利分类:   G02B006/12, G02B006/122
  • 专利详细信息:   CN115857099-A 28 Mar 2023 G02B-006/122 202337 Chinese
  • 申请详细信息:   CN115857099-A CN11340279 28 Oct 2022
  • 优先权号:   CN11340279

▎ 摘  要

NOVELTY - The Fano resonance modulator comprises a micro-ring resonator structure formed on the silicon-on-insulator base layer. The micro-ring resonator structure has a straight waveguide (101) and an annular waveguide (102). The coupling area of the straight waveguide is provided with multiple of air holes. A single layer graphene is paved by the silicon base layer on the insulator. The single layer graphene covered with the micro-ring resonator structure. USE - Graphene mixed silicon-based Fano resonance modulator for use in a test system (claimed) of an optoelectronic device in electronic. ADVANTAGE - The mixed silicon-based Fano resonance modulator has simple structure, small occupied space, easy production, and it can realize higher switching rate and modulation rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a test system for test graphene of mixing silicon-based Fano resonance modulator. DESCRIPTION OF DRAWING(S) - The drawing shows a structural schematic view of the test system. (Drawing includes non-English language text). 100Silicon-on-insulator substrate 101Straight waveguide 102Annular waveguide 103Air hole 104First electrode 105Second electrode 106Single-layer graphene 200Laser 300Spectrometer 400Direct current power supply