▎ 摘　　要

NOVELTY - The fabrication method involves forming a graphene sheet (102) on a substrate (104), forming a source (108) and drain (110) on graphene sheet to define a gap between source and drain, and forming slot in the graphene sheet having width that allows an etchant to pass through the graphene sheet. The etchant is applied to the substrate through the slot formed in graphene sheet to etch the substrate below the graphene sheet. USE - Fabrication method of semiconducting device such as transistor. ADVANTAGE - Reduces impact of stray charge or adsorbed molecules by formation of dual gate structure in slots in suspended graphene bridge. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the graphene field-effect transistor. Graphene sheet (102) Substrate (104) Source (108) Drain (110) Gate metal (124)