▎ 摘　　要

NOVELTY - The device has an epitaxial layer provided with a silicon surface silicon carbide substrate (1) i.e. 4H-silicon carbide substrate or 6H-Si silicon carbide substrate, a carbon buffer layer (2) and a graphite layer (3). The carbon buffer layer is arranged on the silicon surface silicon carbide substrate and a graphene-containing layer. The graphite layer is provided with metal i.e. inter-digital electrode (4). The inter-digital electrode is provided with an electrode leading-out wire that is provided with an ultrasonic pressure welding part (5). USE - Silicon surface silicon carbide substrate graphene photo-electric device. ADVANTAGE - The device ensures simple preparation process and avoids doping effect. The device prevents photoresist graphene from being polluted. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon surface silicon carbide substrate graphene photo-electric device preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a silicon surface silicon carbide substrate graphene photo-electric device. Silicon surface silicon carbide substrate (1) Carbon buffer layer (2) Graphite layer (3) Inter-digital electrode (4) Ultrasonic pressure welding part (5)