▎ 摘　　要

NOVELTY - Integrated circuit device (100) comprises a substrate (110) including a word line trench (WLT) and a first recess adjacent to a first side wall portion of an inner wall of the word line trench, and a channel region on the inner wall of the word line trench. The channel region extending in a first direction parallel to an upper surface of the substrate. The channel region including a first channel region (CH1) and a second channel region. The first channel region being in a portion of the substrate that is adjacent to the inner wall of the word line trench. The second channel region being on the inner wall of the word line trench and including a two-dimensional (2D) material of a first conductivity type. A gate insulating layer (122) on the second channel region, a word line on the gate insulating layer and inside the word line trench, and a source region in the first recess and including the two-dimensional (2D) material of the first conductivity type. USE - Integrated circuit device. ADVANTAGE - The integrated circuit device capable of reducing power consumption. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view taken along a line A-A' of integrated circuit device. 100Integrated circuit device 110Substrate 122Gate insulating layer CH1First channel region WLTWord line trench