▎ 摘 要
NOVELTY - Preparing graphene by using rapid transfer device, comprises (i) taking out substrate grown on the back surface of graphene by carrying out chemical vapor deposition (CVD); (ii) inserting single graphene/growth substrate sample at an angle below the liquid level; (iii) etching; (iv) adjusting liquid surface position of etching liquid, and performing transferring operation, slowly etching the single-side of graphene sample whose free ends are fixed, until the entire etching process is finished; and (v) taking the resulting graphene/target substrate, washing with deionized water, and drying. USE - The method is useful for preparing graphene by using rapid transfer device (claimed). ADVANTAGE - The method prevents the: utilization of poly(methyl methacrylate) (PMMA) and organic matter, and production of residual organic component causing pollution; and has simple transferring process; utilizes continuous large production area; and produces high quality product. DETAILED DESCRIPTION - Preparing graphene by using rapid transfer device, comprises (i) taking out substrate grown on the back surface of graphene by carrying out chemical vapor deposition (CVD); (ii) fixing the target substrate obtained in the step (i) of single graphene/growth substrate samples to the bottom of a hollow container wall on the same end, where the target substrate is parallel to the surface, and inserting the single graphene/growth substrate sample at an angle below the liquid level; (iii) partially immersing the growth substrate surface into a first etching solution, etching, and adjusting the position of the hollow container surface, and binding graphene with the target substrate, so as to achieve complete transfer effect; (iv) continuously adjusting the liquid surface position of the etching liquid, and repeating the step (iii), carrying out the transferring operation, and slowly etching single-side of the graphene sample whose free ends are fixed, until the entire etching process is finished; and (v) taking the resulting graphene/target substrate having electrical conductivity of 18.25 k Omega cm, and washing with deionized water, and drying.