• 专利标题:   Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.
  • 专利号:   US2013071616-A1, WO2013039508-A1, KR2014045560-A, CN103796950-A, JP2014526430-W, US9011968-B2, JP5779721-B2, KR1629869-B1
  • 发明人:   MILLER S, YAGER T, MILLER S A, YAGER T A
  • 专利权人:   EMPIRE TECHNOLOGY DEV LLC, ISLAND GIANT DEV LLP, EMPIRE TECHNOLOGY DEV LLC
  • 国际专利分类:   B05C003/20, B05D005/12, B32B003/10, B32B009/04, B32B005/00, B82B003/00, C01B031/04, C01B031/02, H01L021/28, H01L021/288, B05C003/00
  • 专利详细信息:   US2013071616-A1 21 Mar 2013 B32B-009/04 201326 Pages: 11 English
  • 申请详细信息:   US2013071616-A1 US13391158 17 Feb 2012
  • 优先权号:   CN80073451, JP529668, WOUS051893, US13391158, KR703623

▎ 摘  要

NOVELTY - A method for partially altering defect area (108) in a layer (102) on substrate (104), where the layer includes grapheme (106), involves receiving the layer on substrate, where the layer includes at least some defect areas in the graphene, where defect areas revealing exposed areas (109) of the substrate; reacting the substrate under sufficient reaction conditions to produce cationic area (176) in at least one of exposed areas; adhering graphene oxide to the cationic area to produce a graphene oxide layer; and reducing graphene oxide layer to produce altered defect area in the layer. USE - For partially altering a defect area in a layer on a substrate (claimed), for lithography as may occur in displays, microelectronic circuits, electronic interconnects, and/or optical applications. ADVANTAGE - The method is effective to reduce the graphene oxide layer to produce at least one altered defect area in the layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) system effective to at least partially alter a defect area in a layer on a substrate, where the layer includes graphene, comprising a chamber configured effective to receive a layer on the substrate, where the layer includes at least some graphene, and at least some defect areas in the graphene, where the defect areas are effective to reveal exposed areas of the substrate; and a container configured in communication with the chamber, where the chamber and the container are configured effective to react the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas; adhere graphene oxide to the cationic area to produce a graphene oxide layer; and reduce the graphene oxide layer to produce at least one altered defect area in the layer; and (2) processed layer comprising at least some graphene on a substrate, at least one defect area in the graphene, where the defect area is effective to reveal a cationic area of the substrate; and a reduced graphene oxide layer adhered to the cationic area. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of system for implementing graphene defect alteration. Graphene defect alteration system (100) Layer of graphene (102) Substrate (104) Graphene (106) Defect areas (108, 110) Exposed areas (109) Gas (120) Liquid (160)