▎ 摘　　要

NOVELTY - The method involves forming (S101) a metal layer on a flexible substrate. A gate insulating layer is formed (S102) on a gate line and a gate electrode. A graphene-containing layer is formed (S103) on the gate insulating layer to obtain graphene. The source electrode, semiconductor layer and drain electrode are arranged (S104) to form a TFT channel, pixel electrode and drain electrode. The data line, source electrode, semiconductor active layer, drain electrode and pixel electrode are formed (S105) on a protection layer. USE - Manufacturing method of flexible thin film transistor (TFT) array substrate used in display device (all claimed). ADVANTAGE - The occurrence of crack in flexible TFT substrate can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for flexible TFT array substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the manufacturing process of flexible TFT array substrate. (Drawing includes non-English language text) Step for forming metal layer on flexible substrate (S101) Step for forming gate insulating layer on gate line and gate electrode (S102) Step for forming graphene-containing layer on gate insulating layer to obtain graphene (S103) Step for arranging source electrode, semiconductor layer and drain electrode to form TFT channel, pixel electrode and drain electrode (S104) Step for forming data line, source electrode, semiconductor active layer, drain electrode and pixel electrode on protection layer (S105)