▎ 摘　　要

NOVELTY - A trenched field effect transistor, utility model relates to the technical field of semiconductor; the middle part of the upper surface of the substrate is fixed with a number one graphene layer; the left and right two sides of the number one graphene layer are provided with a number one epitaxial layer; the first epitaxial layer is fixed on the upper surface of the substrate; the upper side of the first epitaxial layer and the first graphene layer at the left and right sides is provided with a second epitaxial layer, the middle part of the second epitaxial layer is internally orderly provided with multiple rows of boron diffusion area group from left to right; the upper side of the second epitaxial layer is provided with a second graphene layer; groove in the middle part of the second graphene layer is internally provided with a second gate oxide layer; the left and right two sides of upper surface of the second graphene layer are respectively provided with a source electrode and a drain electrode; it improves the function of the trench field effect transistor breakdown voltage.