• 专利标题:   Growing large area and few layers of graphene with small molecules comprises e.g. providing containing cavity and growth cavity, placing growth material in containing cavity and connecting containing chamber with protective gas.
  • 专利号:   CN111517309-A
  • 发明人:   WU Q
  • 专利权人:   WU Q
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/44
  • 专利详细信息:   CN111517309-A 11 Aug 2020 C01B-032/186 202069 Pages: 10 Chinese
  • 申请详细信息:   CN111517309-A CN10353553 29 Apr 2020
  • 优先权号:   CN10353553

▎ 摘  要

NOVELTY - Growing a large area and few layers of graphene with small molecules comprises e.g. providing a containing cavity and a growth cavity, the containing cavity is connected to the growth cavity, placing the growth substrate in the growth cavity, and placing growth material in the containing cavity, evacuating both the containing chamber and the growth chamber to below 10 Pa, connecting the containing chamber with a protective gas, which is introduced from the containing chamber and discharging from the growth chamber, setting the flow rate of the protective gas to be 50-400 sccm, and maintaining the internal air pressure of the accommodating chamber and the growth chamber to be 20-100 Pa, adjusting the temperature in the growth chamber to 500-700 degrees C, adjusting the temperature in the accommodating chamber to 30-70 degrees C, and the growth time is 10-200 minutes, after the growth is completed, continuing to pass protective gas until the temperature in the growth chamber drops to room temperature. USE - The method is useful for growing a large area and few layers of graphene with small molecules. ADVANTAGE - The method: has considerable catalytic reduction ability; catalyzes the reduction of aromatic small molecule compounds into graphene and adhere to the metal substrate; improves the safety of the preparation process; and reduces the production cost. DETAILED DESCRIPTION - Growing a large area and few layers of graphene with small molecules comprises providing a containing cavity and a growth cavity, the containing cavity is connected to the growth cavity, placing the growth substrate in the growth cavity, and placing growth material in the containing cavity, evacuating both the containing chamber and the growth chamber to below 10 Pa, connecting the containing chamber with a protective gas, which is introduced from the containing chamber and discharging from the growth chamber, setting the flow rate of the protective gas to be 50-400 sccm, and maintaining the internal air pressure of the accommodating chamber and the growth chamber to be 20-100 Pa, adjusting the temperature in the growth chamber to 500-700 degrees C, adjusting the temperature in the accommodating chamber to 30-70 degrees C, and the growth time is 10-200 minutes, after the growth is completed, continuing to pass protective gas until the temperature in the growth chamber drops to room temperature, taking out the growth substrate when the pressure in the growth chamber is balanced with the external pressure to obtain grapheme, where the growth material is an aromatic small molecule compound and covalently connecting the benzene ring of the aromatic small molecule compound to at least one nitrogen atom, and the growth substrate is a metal substrate. AN INDEPENDENT CLAIM are also included for system for growing large-area and few-layer graphene with small molecules.