▎ 摘　　要

NOVELTY - The device has a magnetic layer connected to a non-magnetic layer. An insulating substrate is attached with the non-magnetic layer. An ultra-thin platinum layer is arranged between the magnetic layer and the non-magnetic layer, and includes shape and size corresponding to the magnetic layer. The non-magnetic layer includes two layer portions, where one of the layer portions is formed from graphene material arranged in contact with the ultra-thin platinum layer, and the other layer portion is arranged as a monolayer and is located between the former layer portion and the insulating substrate. USE - High-speed graphene recording device for a spin-transfer torque magnetoresistive RAM of a computer. ADVANTAGE - The device improves unique characteristics of the memory cell by using the quasi-free graphene material and monolayers, so as to enhance performance of the memory cell and increase recording speed at low cost. The quasi-free graphene material, which ensures high mobility of current carriers, high electrical conductivity and enhanced spin diffusion length. The device includes a ferromagnet contact portion, which allows transfer of spin moment in the recording element to the free magnetic layer. The device can reduce power consumption during device operation by reducing electric current required to record the information. The device satisfies demands on miniaturization in size of the memory.