▎ 摘　　要

NOVELTY - The method involves providing and subjecting an insulating or semiconducting inorganic substrate in a CVD reactor to a thermal pre-treatment in a hydrogen-containing gas atmosphere. The graphene is deposited on the insulating or semiconducting inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the insulating or semiconducting inorganic substrate. The inorganic substrate is present on a support element. The transition metal catalyst is not present in a CVD reactor. USE - Method for preparing graphene by CVD. ADVANTAGE - The high quality and high transmittance of graphene are realized. DESCRIPTION OF DRAWING(S) - The drawing shows the graphical view illustrating a method for preparing graphene.