▎ 摘　　要

NOVELTY - The device (300) has a conductive substrate (310) functioning as a gate electrode (370). A multi-layered gate insulating layer (360) is formed on the conductive substrate, and includes an inorganic insulating layer (361) and an organic insulating layer (362). A graphene channel layer (330) is formed on the gate insulating layer. A source electrode (341) is formed on an end of the graphene channel layer, and a drain electrode (342) is formed on another end of the graphene channel layer. The organic insulating layer is placed between the inorganic insulating layer and the graphene channel layer. USE - Graphene electronic device e.g. FET (claimed). Can also be used as a radio frequency transistor. ADVANTAGE - The organic insulating layer is formed between the graphene channel layer and the inorganic insulating layer, so that carrier mobility of the graphene channel layer is reduced. The organic insulating layer prevents or reduces presence of a foreign material at an interface between the inorganic insulating layer and the graphene channel layer, and can be formed of a polymer insulating layer with strong hydrophobic characteristic in order to prevent or reduce the absorption of water molecules that cause hole doping in the graphene channel layer. DETAILED DESCRIPTION - The graphene channel layer is a nano-ribbon graphene channel layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene electronic device. Graphene electronic device (300) Conductive substrate (310) Graphene channel layer (330) Source electrode (341) Drain electrode (342) Multi-layered gate insulating layer (360) Inorganic insulating layer (361) Organic insulating layer (362) Gate electrode (370)