• 专利标题:   Plasmon surface enhanced graphene silicon solar battery, has back electrode fixed on silicon wafers, and plasmon enhancement layer and silicon dioxide layer that are overlapped with graphene film layer.
  • 专利号:   CN204424292-U
  • 发明人:   KUANG Y, LIU Y, MA Y, XU J, XUE C, FENG J
  • 专利权人:   CHANGSHU INST TECHNOLOGY
  • 国际专利分类:   H01L031/072
  • 专利详细信息:   CN204424292-U 24 Jun 2015 H01L-031/072 201558 Pages: 6 Chinese
  • 申请详细信息:   CN204424292-U CN20149174 17 Mar 2015
  • 优先权号:   CN20149174

▎ 摘  要

NOVELTY - The utility model claims a surface plasmon enhanced graphene silicon solar cell comprising a back electrode disposed on the silicon chip back electrode, a silicon dioxide layer on the silicon chip, the silicon dioxide layer is cyclic structure having a through hole, the through hole exposed silicon oxide layer silicon wafer surface from the surface of the metal reinforcing layer disposed away from the reinforcing layer and the silicon dioxide layer, a thin film layer of the graphene surface. The utility model is new type structure is simple, cost is low, metal nano-particle is area surface plasmons can be greatly improves the area of particle, electromagnetic field to effectively increase particle around the silicon base material is light absorption capacity, to increase conversion efficiency of solar energy battery.