• 专利标题:   Synthesizing single-layer graphene on surface of single crystal iron for preparing spin device, involves placing single crystal iron, iron sample with clean surface in vacuum environment containing hydrocarbon gas.
  • 专利号:   CN111411343-A
  • 发明人:   HONG Z, LI R, YOU L
  • 专利权人:   UNIV HUAZHONG SCI TECHNOLOGY
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26
  • 专利详细信息:   CN111411343-A 14 Jul 2020 C23C-016/26 202065 Pages: 12 Chinese
  • 申请详细信息:   CN111411343-A CN10055690 17 Jan 2020
  • 优先权号:   CN10055690

▎ 摘  要

NOVELTY - Synthesizing single-layer graphene on surface of single crystal iron involves placing single crystal iron, iron sample with clean surface in vacuum environment containing hydrocarbon gas. The pressure in the vacuum environment is not higher than 10-5 pascal. The iron sample extracts carbon element from the hydrocarbon gas, and single layer of graphene grows on surface of single crystal iron. USE - Method for synthesizing single-layer graphene on surface of single crystal iron for preparing spin device (claimed). ADVANTAGE - The method enables to synthesize single-layer graphene on surface of single crystal iron that maintains original performance and prevents reaction with oxygen in the air.