▎ 摘　　要

NOVELTY - Construction of high-sensitivity near infrared photoelectric detector involves (i) transferring graphene film prepared by chemical vapor deposition to gallium arsenide film and/or gallium arsenide wafer to obtain graphene/gallium arsenide sample, (ii) placing the graphene/gallium arsenide sample on the heating plate and heating at 45-70 degrees C for pre-processing, (iii) placing the graphene/gallium arsenide sample into a vacuum oven and annealing at 60-150 degrees C to obtain the processed sample, and (iv) fabricating electrode on the processed samples. The method involves using graphene/gallium arsenide composite structure to effectively absorb near-infrared light, efficiently separating photoinduced excitons and gallium arsenide doping effects on graphene, controlling device pretreatment, and annealing temperature and time for interface and material optimization. USE - Construction of high-sensitivity near-infrared photoelectric detector (claimed). ADVANTAGE - The method enables construction of high-sensitivity near infrared photoelectric detector with quickly responding to the near infrared light.