▎ 摘　　要

NOVELTY - The memory has silicon wafer that is provided with a silicon oxide layer as a substrate. The memory is a small layer of graphene as a floating gate layer in order from the substrate. The hexagonal boron nitride as the insulating layer, and two-dimensional chalcogenide as the channel layer. The memory also includes a source and a drain that are formed on the channel layer by an evaporation process. The memory is formed by stacking layers of material on the substrate in sequence by mechanical peeling and transfer. The two-dimensional chalcogenide compound is platinum disulfide or rhenium disulfide. The substrate is a silicon oxide wafer with the thickness of an oxide layer of 90 nm. USE - Floating gate FET memory. ADVANTAGE - The memory is not easy to damage in the test process. The power consumption of the memory is reduced. The floating gate type FET memory with excellent performance is successfully constructed. The data processing time is greatly shortened, and the data volume which is processed by the memory in unit time is increased. The floating gate type memory realizes the quick writing of data and quick erasing of the memory data, and improves the data writing speed of the memory. The floating gate FET memory with platinum disulfide as channel material realizes the quick erasing of data without sacrificing the high on-off ratio of the memory. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of a floating gate type FET memory. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of device configuration diagram and a device light mirror diagram of floating gate FET memory. (Drawing includes non-English language text)