▎ 摘　　要

NOVELTY - The transistor has a bottom-up silicon substrate (1), an integrated circuit (IC) circuit (2), a circuit medium layer (10), and a detector array (3) that is composed of multiple detector units arranged in an array. The detector unit includes a bottom gate electrode (4), a dielectric layer (5), graphene (6), a hole blocking layer (8), and a donor-acceptor mixed film (9) arranged from bottom to top. The detector unit includes metal electrodes that are located on the graphene. The metal electrode is provided at both ends of the hole blocking layer. The thickness of the graphene is 0.35 nanometer (nm). The thickness is less than the effective transmission distance of photo-generated carriers. The material of the bottom gate electrode is a highly doped semiconductor material with a thickness of 1 mm. USE - Transistor for switching infrared photoelectric memory and detection functions. ADVANTAGE - The transistor has optical memory function, and adjusts gate voltage to make the transistor in the detection mode with optical memory without detecting mode of optical memory, electrically erasable light memory of the detection mode and completely closed state switching with potential applied to switch modulator based on infrared optical communication technology and infrared real-time imaging and energy delay imaging of the double-function switching, and has simple preparation, and prepares large area array device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing transistor for switching infrared photoelectric memory and detection functions. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a transistor with switching infrared photoelectric memory and detection functions. Silicon substrate (1) IC circuit (2) Detector array (3) Bottom gate electrode (4) Dielectric layer (5) Graphene (6) Hole blocking layer (8) Donor-acceptor mixed film (9) Circuit medium layer (10)