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  • 专利标题:   Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.
  • 专利号:   KR2014128735-A
  • 发明人:   CHOI S H, KIM S, LEE J S
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   B01J006/00, B41M005/10, C01B031/02
  • 专利详细信息:   KR2014128735-A 06 Nov 2014 C01B-031/02 201478 Pages: 13
  • 申请详细信息:   KR2014128735-A KR047543 29 Apr 2013
  • 优先权号:   KR047543

▎ 摘　　要

NOVELTY - Controlling method of graphene thickness involves ion-implanting carbon atoms in the metal by ion implantation method, heating carbon atoms-implanted metal, cooling, and growing graphene on the metal. USE - Controlling method of graphene thickness used for manufacturing semiconductor device and light emitting device (claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) production of graphene; and (2) manufacture of semiconductor device or light emitting device.