▎ 摘　　要

NOVELTY - Extension of graphene from hexagonal phase ultrathin silicon carbide film on insulating underlay comprises subjecting insulating underlay to pre-treatment of etching at high temperature using hydrogen to remove scratch on surface and to etch surface to smoothness; subjecting to high-temperature nitrogen treatment to activate epitaxial surface, attaching silicon carbide on surface of underlay and providing with same crystallographic orientation relation with underlay; and extending hexagonal phase monocrystal silicon carbide and vaporizing silicon atoms within silicon carbide. USE - Method for extension of graphene from hexagonal phase ultrathin silicon carbide film on insulating underlay (claimed).