▎ 摘　　要

NOVELTY - The electrode has graphene film is formed as conductive film on transparent substrate. The graphene film is made of phosphorus with thickness in the range of 0.1-10 nm. The permeability of transparent electrode is greater than or equal to 70%. The graphene transparent electrode comprises nickel (Ni), Co (cobalt), Fe (iron), platinum (Pt), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr) and stainless steel. USE - Graphene transparent electrode used in silicon thin film semiconductor device (claimed) for scanning electron microscope. Can also be used in LCD, photovoltaic device, organic light-emitting device (OLED), sensor, memory and integrated circuit. ADVANTAGE - The graphene film is manufactured with large area in sample manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of flexible silicon thin film semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows graphical diagram illustrating the relationship between the wavelength and transmittance.