• 专利标题:   Manufacture of graphene used for e.g. thin conductive film, transparent electrode, memory device, solar cell, organic light-emitting device, and biodevice, involves irradiating gamma-ray to graphene oxide solution and reducing.
  • 专利号:   KR2013112987-A, KR1368241-B1
  • 发明人:   CHOI J H, HWANG I T, JUNG C H, PARK Y W
  • 专利权人:   KOREA ATOMIC ENERGY RES INST, KOREA HYDRO NUCLEAR POWER CO LTD
  • 国际专利分类:   B01J019/08, C01B031/02, H01L051/50
  • 专利详细信息:   KR2013112987-A 15 Oct 2013 C01B-031/02 201422 Pages: 16
  • 申请详细信息:   KR2013112987-A KR034278 03 Apr 2012
  • 优先权号:   KR034278

▎ 摘  要

NOVELTY - A gamma -ray is irradiated to a graphene oxide solution and reduced, to obtain graphene. USE - Manufacture of graphene used for manufacturing metal nanoparticles, thin conductive film, transparent electrode, memory device, solar cell, organic light-emitting device, electric component, and biodevice e.g. biosensor, biochip and neuron on-chip (all claimed). ADVANTAGE - The method enables economical manufacture of graphene having excellent conductivity with high yield and reduced energy consumption, without environmental pollution.