▎ 摘　　要

NOVELTY - The avalanche photoelectric detector has silicon dioxide insulation layer (2) arranged on n-type silicon substrate (1). The circular silicon dioxide window (3) is formed on silicon dioxide insulation layer. An annular top electrode (6) is arranged on the silicon dioxide insulation layer. The silicon dioxide window and n-type silicon substrate are covered by silicon dioxide insulation layer (4). The upper surface of silicon dioxide insulation layer (4) and top electrode are covered by graphene thin film (7). The lower surface of the substrate is provided with bottom electrode (8). USE - Hybrid structure of graphene silicon based avalanche photoelectric detector. ADVANTAGE - The preparation process of the hybrid structure of graphene silicon based avalanche photoelectric detector can be simplified and the cost of the hybrid structure can be reduced. The response speed and gain of the hybrid structure can be improved. The generation of dark electric current can be suppressed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation method of hybrid structure of graphene silicon based avalanche photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the hybrid structure of graphene silicon based avalanche photoelectric detector. N-type silicon substrate (1) Silicon dioxide insulation layers (2,4) Circular silicon dioxide window (3) Top electrode (6) Graphene thin film (7) Bottom electrode (8)