▎ 摘　　要

NOVELTY - The method involves forming an organic colloid layer on a graphene thin film surface. A graphene thin film is arranged on a target substrate e.g. semiconductor substrate, an oxide substrate, a plastic substrate or glass substrate, that is provided with a metal catalyst layer. A tape clipping layer and an UV adhesive tape layer are formed on the organic colloid layer. The metal catalyst layer is made of nickel or copper. USE - Method for preparing a substrate of a graphene thin film semiconductor device. ADVANTAGE - The method enables improving graphene oxide film transferring efficiency and simplifying operation process. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a substrate of a graphene thin film semiconductor device.'(Drawing includes non-English language text)'