▎ 摘　　要

NOVELTY - The gate structure has an insulating layer (2) deposited on the substrate (1), and arranged on the substrate at intervals. The gate (3) is deposited on the insulating layer. The emission cone tip (4) is arranged on the substrate between the insulating layers. The graphene (5) is laid flat on the grid. One pole of the gate voltage power supply (6) is applied to the substrate, and other pole is applied to the gate for applying different magnitudes of gate voltage between the substrate and the gate. The graphene is etched in a controllable manner to form a self-aligned gate hole. USE - Self-aligned graphene field emission gate structure for vacuum electronic device. ADVANTAGE - The self-aligned graphene field emission gate structure can greatly reduce the gate modulation voltage, and effectively improve the electron transmittance and the graphene for controllable etching. The structure can form a large enhanced electric field at the emitting cone tip by applying a very small gate pressure between the substrate and the gate. A controlled etching is performed to the upper graphene layer by changing the size of the gate voltage to change the number of emitting electrons, thus forming a self aligned gate hole, and greatly reducing the modulation voltage of gate. The electronic transmission rate is effectively improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of self-aligned graphene field emission grid structure. DESCRIPTION OF DRAWING(S) - The drawing shows a longitudinal sectional view of the self-aligned graphene field emission gate structure. Substrate (1) Insulating layer (2) Gate (3) Emission cone tip (4) Graphene (5) Grid voltage power supply (6)