▎ 摘　　要

NOVELTY - Manufacture of substrate (100) involves forming silicon carbide layer (14) on a silicon substrate (10), heating upper surface of silicon carbide layer using gas containing hydrogen, and forming a graphene layer (16) on the upper surface of silicon carbide layer. USE - Manufacture of substrate used for electronic apparatus (all claimed) e.g. transistor. ADVANTAGE - The method provides electronic apparatus with high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of substrate. Silicon substrate (10) Nitride semiconductor layer (12) Silicon carbide layer (14) Graphene layer (16) Substrate (100)