▎ 摘　　要

NOVELTY - Preparation of gallium nitride epitaxial structure involves polishing a copper substrate, cleaning, growing a hexagonal boron nitride-graphene composite layer on the copper substrate, performing atomic layer deposition to grow an aluminum nitride layer on the boron nitride-graphene composite layer, and growing a gallium nitride layer on the aluminum nitride thin film using metal-organic chemical vapor deposition. USE - Preparation of gallium nitride epitaxial structure. ADVANTAGE - The method enables efficient preparation of gallium nitride epitaxial structure. The defect dislocation and cracks caused by large lattice mismatch and thermal mismatch between the substrate and the epitaxial layer, and the stress between the substrate and the epitaxial material are effectively reduced, to improve the quality of the gallium nitride epitaxial layer.