• 专利标题:   Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.
  • 专利号:   CN115976487-A
  • 发明人:   GAO H, YANG H, BIAN C
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/34
  • 专利详细信息:   CN115976487-A 18 Apr 2023 C23C-016/26 202342 Chinese
  • 申请详细信息:   CN115976487-A CN11202207 15 Oct 2021
  • 优先权号:   CN11202207

▎ 摘  要

NOVELTY - Preparation method of in-situ packaged two-dimensional material comprises (a) forming first two-dimensional material layer by cleavage of a first two-dimensional material on a substrate using a mechanical cleavage method, (b) forming second two-dimensional material layer between the first two-dimensional layer and the substrate, and (c) using a second chemical vapor to vapor deposition to grow the second two-dimensional material layer in situ. USE - Preparation method of in-situ packaged two-dimensional material used in fields of electronics, energy and biomedicine. Uses include but are not limited to graphene, hexagonal boron nitride (hBN), transition metal disulfide compound (TMD) and superconductivity. ADVANTAGE - The method avoids the unstable two-dimensional material is directly exposed to air, has no special restriction to the selection of the substrate, and is stable at high temperature (i.e., stable at 1000?oC) of material. DESCRIPTION OF DRAWING(S) - The drawing shows an optical microscope photograph of a preparation method of in-situ packaged two-dimensional material (Drawing includes non-English language text). 1Sodium chloride particles 2Balance weighing niobium pentaoxide powder 3Graphene