• 专利标题:   Preparing amorphous carbon/vertical graphene composite electrode material by placing collector material surface provided with vertical graphene in plasma enhanced chemical vapor deposition device, introducing argon gas and depositing.
  • 专利号:   CN105355465-A
  • 发明人:   CHEN S, FENG J, LIN J, LUO D, QI J, LIU Y
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   C23C016/26, C23C016/44, H01G011/24, H01G011/28, H01G011/36, H01G011/86
  • 专利详细信息:   CN105355465-A 24 Feb 2016 H01G-011/86 201645 Pages: 7 English
  • 申请详细信息:   CN105355465-A CN10780169 13 Nov 2015
  • 优先权号:   CN10780169

▎ 摘  要

NOVELTY - Preparation of amorphous carbon/vertical graphene composite electrode material involves placing collector material of which surface is provided with vertical graphene in plasma enhanced chemical vapor deposition device, evacuating, introducing argon, adjusting pressure intensity in vacuum device to 200-400 Pa and increasing temperature in vacuum device to 200-600 degrees C, introducing methane gas into vacuum device, controlling argon gas flow rate and methane gas flow rate, adjusting pressure intensity in vacuum device to 400-800 Pa and carrying out deposition process. USE - The method is useful for preparing amorphous carbon/vertical graphene composite electrode material, which is useful for supercapacitor. ADVANTAGE - The amorphous carbon/vertical graphene composite electrode material improves specific capacitance of supercapacitor. DETAILED DESCRIPTION - Preparation of amorphous carbon/vertical graphene composite electrode material involves (a) placing collector material of which surface is provided with vertical graphene in a plasma enhanced chemical vapor deposition vacuum device, evacuating under pressure of 5 Pa, introducing argon into vacuum device at gas flow rate of 20-40 standard cubic centimeter per minute (sccm), adjusting pressure intensity in plasma enhanced chemical vapor deposition vacuum device to 200-400 Pa and increasing temperature in vacuum device to 200-600 degrees C under pressure of 200-400 Pa and argon atmosphere for 10-30 minutes, (b) introducing methane gas into vacuum device, controlling argon gas flow rate at 1-10 sccm, controlling methane gas flow rate at 5-50 sccm, adjusting pressure intensity in plasma enhanced chemical vapor deposition vacuum device to 400-800 Pa and carrying out deposition process at radio frequency power of 50-200 W, pressure of 400-800 Pa and temperature of 200-600 degrees C for 1-10 minutes, and (c) after completion of deposition, turning off radio frequency power supply and heating power supply, stopping introduction of methane gas and cooling to room temperature at cooling rate of 5-10 degrees C/second under argon atmosphere.