• 专利标题:   Radio frequency switch device for radio frequency circuit of electronic device, has resistive-switching element formed on substrate, provided with bottom electrode and top electrode and attached with resistance change layer.
  • 专利号:   CN113363382-A
  • 发明人:   ZHAO B, BI J, ZHU W, XI K, HAN T, TIAN M
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   CN113363382-A 07 Sep 2021 H01L-045/00 202186 Pages: 12 Chinese
  • 申请详细信息:   CN113363382-A CN10604677 31 May 2021
  • 优先权号:   CN10604677

▎ 摘  要

NOVELTY - The device has a resistive-switching element formed on a substrate, provided with a bottom electrode and a top electrode and attached with a resistance change layer. The resistance change layer is formed between the bottom electrode and the top electrode. A resistance change element is matched with a barrier layer that is located between the top electrode and a resistive layer. The barrier layer is made of two-dimensional materials. The barrier layer is matched with a multi-layer graphene layer. A first signal electrode is electrically connected with the bottom electrode. A second signal electrode is electrically connected with the top electrode. USE - Radio frequency switch device for a radio frequency circuit of an electronic device (all claimed). ADVANTAGE - The device has less static power consumption so as to prevent large static power consumption of the switch chip in the application process. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a radio frequency switch device.