▎ 摘　　要

NOVELTY - Transistor (100) comprises either: source and drain electrodes; a graphene film (10) formed between source electrode and drain electrode having first and second regions; and a gate electrode (12) formed on graphene film via gate insulating film (11); or source and drain electrodes; a graphene film formed between source electrode and drain electrode having first, second and third regions; and a gate electrode made of a material having a work function smaller than a work function of a material of the third region and formed on the graphene film through a gate insulating film. USE - Used as transistor. ADVANTAGE - The transistor exhibits high cutoff characteristic and current driving ability. DETAILED DESCRIPTION - Transistor (100) comprises either: a source electrode; a drain electrode; a graphene film (10) formed between the source electrode and drain electrode having first and second regions functioning as a channel, where a Schottky junction is formed at a junction between the first and second regions; and a gate electrode (12) formed on the first and second regions of the graphene film via a gate insulating film (11), where the first region has a conductor property, and the second region adjacent to the drain electrode side of the first region has a semiconductor property; or the source electrode; the drain electrode; a graphene film formed between the source electrode and drain electrode having first, second and third regions functioning as a channel; and a gate electrode made of a material having a work function smaller than a work function of a material of the third region and formed on the graphene film through a gate insulating film, where the first region has a semiconductor property, second region adjacent to the drain electrode side of the first region has a insulator property and the third region is adjacent to the drain electrode side of the second region has a semiconductor property. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a transistor. Graphene film (10) Gate insulating film (11) Gate electrode (12) Gate sidewall (14) Transistor (100)