▎ 摘　　要

NOVELTY - The graphene FET has gate dielectric layer (140) and the bottom shed dielectric layer (120) that are respectively located on upper and lower portions of the graphene channel layer (130). A substrate (110) is provided with a gate dielectric layer. The source electrode (150) and drain electrode (160) are respectively located at the two ends of the graphene channel layer. A top gate electrode (170) is provided on top of the gate dielectric layer. The top-gate electrode is made of titanium and gold. The source electrode and drain electrode material are provided with chromium and gold. USE - Graphene FET. ADVANTAGE - The characteristics of graphene FET can be improved at high frequency. The electric field effect of graphene FET can be strong. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing graphene FET. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of graphene FET. Substrate (110) Bottom shed dielectric layer (120) Graphene channel layer (130) Gate dielectric layer (140) Source electrode (150) Drain electrode (160) Top gate electrode (170)