▎ 摘　　要

NOVELTY - Growing aluminum nitride epitaxially involves providing substrate. The surface of substrate is silicon carbide material. The multi-layer graphene as insertion layer is provided on silicon carbide material. The aluminum nitride material is epitaxially grown on substrate carrying multilayer graphene. USE - Method for growing aluminum nitride epitaxially used for preparing semiconductor device such as LED (claimed). ADVANTAGE - The method enables to grow aluminum nitride epitaxially that has ability to use peeled substrate repeatedly, and achieves mechanical peeling easily. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the following: (1) an aluminum nitride material, which comprises substrate, where surface of substrate is silicon carbide material, multi-layer graphene as insertion layer is provided on substrate, and aluminum nitride single crystal material is grown on multi-layer graphene, and orientation of multilayer graphene is consistent with orientation of aluminum nitride single crystal material; and (2) an aluminum nitride-based ultraviolet light emitting diode (LED), which comprises aluminum nitride material.